v ishay siliconix spice device model si3552d v n- and p-channel 30-v (d-s) mosfet characteristics ? n- and p-channel vertical dmos ? macro model (subcircuit model) ? level 3 mos ? apply for both linear and sw itching application ? accurate over the ? 55 to 125 c temperature range ? model the gate charge, transient, and diode reverse recovery characteristics description the attached spice model descri bes the ty pical electrical characteristics of the n- and p-channel vertical dmos. the subcircuit model is extr acted and optimized over the ? 55 to 125 c temperature ranges under the pulsed 0-v to 5-v gate drive. the saturated output impedanc e is best fit at the gate bias near the threshold voltage. a novel gate-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to the m easured electrical data and are not intended as an exact phy sical interpretation of the device. subcircuit model schematic this document is intended as a spice modeling guideline and does not constitute a commercial product data sheet. designers sho uld refer to the appropriate data sheet of the same number fo r guaranteed specific ation limits. 1 www. vi s h a y .com document number: 71514 s-52634 ? rev . c, 02-jan-06
v ishay siliconix spice device model si3552dv specificat ions (t j = 2 5 c unless ot herwise not e d) pa ra me te r s y m b o l te s t c o n d i t i o n ty pic a l u n i t static v ds = v, v gs , i d = 250 a n - c h 1 . 9 gate threshold voltage v gs(t h ) v ds = v, v gs , i d = ? 250 a p - c h 2 . 1 3 v v ds = 5 v, v gs = 10 v n-ch 51 on-state drain current a i d ( on) v ds = ? 5 v, v gs = ? 10 v p - c h 2 4 a v gs = 10 v, i d = 2.5 a n-ch 0.090 v gs = ? 10 v, i d = ? 1.8 a p - c h 0 . 1 7 7 v gs = 4.5 v, i d = 2.0 a n-ch 0.134 drain-source on-state resistance a r d s (on) v gs = ? 4.5 v, i d = ? 1.2 a p - c h 0 . 2 8 1 ? v ds = 10 v, i d = 2.5 a n-ch 4.3 forw ard transconductance a g fs v ds = ? 15 v, i d = ? 1.2 a p - c h 2 . 5 s i s = 1.05 a, v gs = 0 v n-ch 0.81 diode forw ard voltage a v sd i s = ? 1.05 v, v gs = 0 v p-ch ? 0.81 v dy namic b n - c h 2 total gate charge q g p - c h 2 . 4 n - c h 0 . 7 gate-source charge q gs p - c h 0 . 9 n - c h 0 . 7 gate-drain charge q gd n-channel v ds = 15 v, v gs = 5 v, i d = 1.8 a p-channel v ds = ? 15 v, v gs = ? 5 v, i d = ? 1.8 a p - c h 0 . 8 nc n - c h 7 turn-on delay time t d(on) p - c h 8 n - c h 9 ris e time t r p - c h 8 n - c h 1 2 turn-of f delay time t d(off) p - c h 1 1 n - c h 1 4 fall time t f n-channel v dd = 15 v, r l = 15 ? i d ? 1 a, v gen = 10 v, r g = 6 ? p-channel v dd = ? 15 v, r l = 15 ? i d ? ? 1 a, v gen = ? 10 v, r g = 6 ? p - c h 1 2 i f = a, i s = 1.05a, di/dt = 100 a/ s n - c h 3 5 source-drain rev e rse recov e ry time t rr i f = a, i s = ? 1.05a, di/dt = 100 a/ s p - c h 3 1 ns not e s a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse w i dth 300 s, duty cy cle 2%. 2 www. vi s h a y .com document number: 71514 s-52634 ? rev . c , 02-jan-06
v ishay siliconix spice device model si3552d v comparison of model wit h measured dat a (t j =2 5 c unless ot herwise not e d) n-channel mosfet 3 www. vi s h a y .com document number: 71514 s-52634 ? rev . c , 02-jan-06
4 v ishay siliconix spice device model si3552dv www. vi s h a y .com document number: 71514 s-52634 ? rev . c , 02-jan-06 p-channel mosfet
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